Invention Grant
US07727803B2 Semiconductor device, package structure thereof, and method for manufacturing the semiconductor device 有权
半导体器件,其封装结构以及半导体器件的制造方法

  • Patent Title: Semiconductor device, package structure thereof, and method for manufacturing the semiconductor device
  • Patent Title (中): 半导体器件,其封装结构以及半导体器件的制造方法
  • Application No.: US11714350
    Application Date: 2007-03-06
  • Publication No.: US07727803B2
    Publication Date: 2010-06-01
  • Inventor: Osamu Yamagata
  • Applicant: Osamu Yamagata
  • Applicant Address: JP Tokyo
  • Assignee: Sony Corporation
  • Current Assignee: Sony Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Frommer Lawrence & Haug LLP
  • Agent William S. Frommer; Thomas F. Presson
  • Priority: JP2003-168625 20030613
  • Main IPC: H01L21/00
  • IPC: H01L21/00
Semiconductor device, package structure thereof, and method for manufacturing the semiconductor device
Abstract:
A semiconductor device includes a plurality of insulating layers laminated on a substrate to cover passive elements such as a capacitor, an inductor, and the like, and to fix an IC chip in a face up state in one of the insulating layers. The insulating layers have similar structures in each of which the passive element or the semiconductor chip is disposed in at the bottom, a plug is formed in the insulating layer to pass therethrough in the thickness direction for extending an electrode of one of these elements to the top surface, and a conductive layer is provided as wiring on the top surface of the insulating layer to be connected to the plugs for electrically connecting respective elements or rearranging the electrode position. Also, an insulating layer is provided on the top for protecting the semiconductor device and for providing an external connecting electrode.
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