Invention Grant
US07727829B2 Method of forming a semiconductor device having a removable sidewall spacer
有权
形成具有可移除侧壁间隔物的半导体器件的方法
- Patent Title: Method of forming a semiconductor device having a removable sidewall spacer
- Patent Title (中): 形成具有可移除侧壁间隔物的半导体器件的方法
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Application No.: US11671567Application Date: 2007-02-06
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Publication No.: US07727829B2Publication Date: 2010-06-01
- Inventor: Vishal P. Trivedi , Leo Mathew
- Applicant: Vishal P. Trivedi , Leo Mathew
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Robert L. King; James L. Clingan, Jr.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A semiconductor device is formed using a semiconductor substrate. A gate dielectric is formed over the semiconductor substrate. A gate electrode layer is formed over the gate dielectric. A patterned masking layer is formed over the gate electrode layer. A first region of the gate electrode layer lies within an opening in the patterned masking layer. The first region of the gate electrode layer is partially etched to leave an elevated portion of the gate electrode layer and a lower portion adjacent to the elevated portion. A sidewall spacer is formed adjacent to the elevated portion and over the lower portion. An implant is performed into the semiconductor substrate using the elevated portion and the sidewall spacer as a mask. The sidewall spacer and the lower portion are removed.
Public/Granted literature
- US20080188068A1 METHOD OF FORMING A SEMICONDUCTOR DEVICE HAVING A REMOVABLE SIDEWALL SPACER Public/Granted day:2008-08-07
Information query
IPC分类:
