An object of the present invention is to provide a method for producing a gallium nitride-based compound semiconductor multilayer structure useful for the production of a gallium nitride-based compound semiconductor light-emitting device which can ensure that the operating voltage is reduced, the light emission output is good and the light emission output is less changed due to aging.The inventive production method of a gallium nitride-based compound semiconductor multilayer structure comprises a substrate having thereon an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, the light-emitting layer being disposed between the n-type semiconductor layer and the p-type semiconductor layer, and the light-emitting layer having a multiple quantum well structure formed by alternately stacking a well layer and a barrier layer, wherein at least one well layer has a non-uniform thickness, at least a part of the barrier layer is grown at a higher temperature than the well layer, and the temperature difference between each growth temperature of the well layer, the barrier layer and the p-type semiconductor layer is adjusted to be in a specific range.