Invention Grant
- Patent Title: Method of etching a TE/PCMO stack using an etch stop layer
- Patent Title (中): 使用蚀刻停止层蚀刻TE / PCMO堆叠的方法
-
Application No.: US11215519Application Date: 2005-08-30
-
Publication No.: US07727897B2Publication Date: 2010-06-01
- Inventor: Bruce D. Ulrich , Lisa H. Stecker , Fengyan Zhang , Sheng Teng Hsu
- Applicant: Bruce D. Ulrich , Lisa H. Stecker , Fengyan Zhang , Sheng Teng Hsu
- Applicant Address: US WA Camas
- Assignee: Sharp Laboratories of America, Inc.
- Current Assignee: Sharp Laboratories of America, Inc.
- Current Assignee Address: US WA Camas
- Agent David C. Ripma
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method of etching a top electrode/ferroelectric stack using an etch stop layer includes forming a first layer of a first dielectric material on a substrate; forming a bottom electrode in the first layer of a first dielectric material; depositing an etch stop layer on the first layer of the first dielectric material and the bottom electrode, including forming a hole therein; depositing a layer of ferroelectric material and depositing top electrode material on the ferroelectric material to form a top electrode/ferroelectric stack; stack etching the top electrode and ferroelectric material; depositing a layer of a second dielectric material encapsulating the top electrode and ferroelectric material; etching the layer of the second dielectric material to form a sidewall about the top electrode and ferroelectric material; and depositing a second and third layers of the first dielectric material.
Public/Granted literature
- US20070049029A1 Method of etching a TE/PCMO stack using an etch stop layer Public/Granted day:2007-03-01
Information query
IPC分类:
