Invention Grant
US07727900B2 Surface preparation for gate oxide formation that avoids chemical oxide formation
有权
防止化学氧化物形成的栅极氧化物形成的表面处理
- Patent Title: Surface preparation for gate oxide formation that avoids chemical oxide formation
- Patent Title (中): 防止化学氧化物形成的栅极氧化物形成的表面处理
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Application No.: US11358624Application Date: 2006-02-21
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Publication No.: US07727900B2Publication Date: 2010-06-01
- Inventor: Matt Yeh , Shun Wu Lin , Chi-Chun Chen , Shih-Chang Chen
- Applicant: Matt Yeh , Shun Wu Lin , Chi-Chun Chen , Shih-Chang Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
A cleaning sequence usable in semiconductor manufacturing efficiently cleans semiconductor substrates while preventing chemical oxide formation thereon. The sequence includes the sequence of: 1) treating with an HF solution; 2) treating with pure H2SO4; 3) treating with an H2O2 solution; 4) a DI water rinse; and 5) treatment with an HCl solution. The pure H2SO4 solution may include an H2SO4 concentration of about ninety-eight percent (98%) or greater. After the HCl solution treatment, the cleaned surface may be a silicon surface that is free of a chemical oxide having a thickness of 5 angstroms or greater. The invention finds particular advantage in semiconductor devices that utilize multiple gate oxide thicknesses.
Public/Granted literature
- US20070197037A1 Surface preparation for gate oxide formation that avoids chemical oxide formation Public/Granted day:2007-08-23
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