Invention Grant
US07727904B2 Methods of forming SiC MOSFETs with high inversion layer mobility
有权
形成具有高反型层迁移率的SiC MOSFET的方法
- Patent Title: Methods of forming SiC MOSFETs with high inversion layer mobility
- Patent Title (中): 形成具有高反型层迁移率的SiC MOSFET的方法
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Application No.: US11486752Application Date: 2006-07-14
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Publication No.: US07727904B2Publication Date: 2010-06-01
- Inventor: Mrinal K. Das , Brett Hull , Sumi Krishnaswami
- Applicant: Mrinal K. Das , Brett Hull , Sumi Krishnaswami
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
Methods of forming an oxide layer on silicon carbide include thermally growing an oxide layer on a layer of silicon carbide, and annealing the oxide layer in an environment containing NO at a temperature greater than 1175° C. The oxide layer may be annealed in NO in a silicon carbide tube that may be coated with silicon carbide. To form the oxide layer, a preliminary oxide layer may be thermally grown on a silicon carbide layer in dry O2, and the preliminary oxide layer may be re-oxidized in wet O2.
Public/Granted literature
- US20080233285A1 Methods of forming SIC MOSFETs with high inversion layer mobility Public/Granted day:2008-09-25
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