Invention Grant
- Patent Title: Manufacturing method of semiconductor device and semiconductor device produced therewith
- Patent Title (中): 由此制造的半导体装置及半导体装置的制造方法
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Application No.: US11661706Application Date: 2005-09-01
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Publication No.: US07727907B2Publication Date: 2010-06-01
- Inventor: Yoshiaki Oku , Nobutoshi Fujii , Kazuo Kohmura
- Applicant: Yoshiaki Oku , Nobutoshi Fujii , Kazuo Kohmura
- Applicant Address: JP Kanagawa JP Tokyo
- Assignee: ULVAC Inc.,Mitsui Chemicals, Inc.
- Current Assignee: ULVAC Inc.,Mitsui Chemicals, Inc.
- Current Assignee Address: JP Kanagawa JP Tokyo
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2004-255463 20040902
- International Application: PCT/JP2005/016031 WO 20050901
- International Announcement: WO2006/025501 WO 20060309
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided.A manufacturing method of a semiconductor device includes: a step of forming a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, on a surface of a semiconductor substrate on which a desired element region is formed; a step of applying patterning on a surface of the dielectric thin film through a mask; and a step of bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the patterned surface of the dielectric thin film.
Public/Granted literature
- US20070228568A1 Manufacturing Method of Semiconductor Device and Semiconductor Device Produced Therewith Public/Granted day:2007-10-04
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