Invention Grant
- Patent Title: Method of light enhanced atomic layer deposition
- Patent Title (中): 光增强原子层沉积的方法
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Application No.: US11378270Application Date: 2006-03-20
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Publication No.: US07727912B2Publication Date: 2010-06-01
- Inventor: Tadahiro Ishizaka , Frank M. Cerio, Jr. , Jacques Faguet
- Applicant: Tadahiro Ishizaka , Frank M. Cerio, Jr. , Jacques Faguet
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L21/469
- IPC: H01L21/469
Abstract:
A method light enhanced atomic layer deposition for forming a film on a substrate. The method includes disposing the substrate in a process chamber of a light enhanced atomic layer deposition (LEALD) system configured to perform a LEALD process; and depositing a film on the substrate using the LEALD process, where the depositing includes (a) exposing the substrate to a first process material, (b) exposing the substrate to a second process material containing a reducing agent and irradiating the substrate with a first light radiation having either no or at least partial temporal overlap with the exposing of the substrate to the second process material, (c) repeating steps (a) and (b) until the desired film has been deposited. According to one embodiment of the invention, the deposited film can be a TaCN film or a TaC film.
Public/Granted literature
- US20070218704A1 Method of light enhanced atomic layer deposition Public/Granted day:2007-09-20
Information query
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