Invention Grant
- Patent Title: X-ray detector
- Patent Title (中): X射线探测器
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Application No.: US12397746Application Date: 2009-03-04
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Publication No.: US07728301B2Publication Date: 2010-06-01
- Inventor: Masaki Atsuta , Yujiro Hara , Hideyuki Nakao
- Applicant: Masaki Atsuta , Yujiro Hara , Hideyuki Nakao
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-077856 20080325
- Main IPC: G01T1/24
- IPC: G01T1/24

Abstract:
An X-ray detector includes: a semiconductor substrate to generate charged particles by an irradiation of an X-ray; a plurality of pixel electrodes arranged in matrix on an X-ray incident surface of the semiconductor substrate and applied with a first electric potential to detect the charged particles; and a platy electrode provided on a surface opposite to the X-ray incident surface of the semiconductor substrate and applied with a second electric potential different from the first electric potential.
Public/Granted literature
- US20090242781A1 X-RAY DETECTOR Public/Granted day:2009-10-01
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