Invention Grant
- Patent Title: Vertical phase change memory cell and methods for manufacturing thereof
- Patent Title (中): 垂直相变存储单元及其制造方法
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Application No.: US12158113Application Date: 2006-12-12
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Publication No.: US07728319B2Publication Date: 2010-06-01
- Inventor: Ludovic Raymond Andre Goux , Dirk Johan Cecil Christiaan Marie Wouters , Judit Gloria Lisoni Reyes , Thomas Gille
- Applicant: Ludovic Raymond Andre Goux , Dirk Johan Cecil Christiaan Marie Wouters , Judit Gloria Lisoni Reyes , Thomas Gille
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- International Application: PCT/IB2006/054785 WO 20061212
- International Announcement: WO2007/072308 WO 20070628
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
The present invention discloses a vertical phase-change-memory (PCM) cell, comprising a stack of a bottom electrode (5) contacting a first layer of phase change material (14), a dielectric layer (12) having an opening (13), a second layer of phase change material (6) in contact with the first layer of phase change material through the opening in the dielectric layer and a top electrode (7) contacting this second layer of phase change material.
Public/Granted literature
- US20080303014A1 Vertical Phase Change Memory Cell and Methods For Manufacturing Thereof Public/Granted day:2008-12-11
Information query
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