Invention Grant
US07728327B2 2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material
有权
使用突变金属 - 绝缘体转变半导体材料的2端子半导体器件
- Patent Title: 2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material
- Patent Title (中): 使用突变金属 - 绝缘体转变半导体材料的2端子半导体器件
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Application No.: US11011878Application Date: 2004-12-13
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Publication No.: US07728327B2Publication Date: 2010-06-01
- Inventor: Hyun Tak Kim , Doo Hyeb Youn , Byung Gyu Chae , Kwang Yong Kang , Yong Sik Lim , Gyungock Kim , Sunglyul Maeng , Seong Hyun Kim
- Applicant: Hyun Tak Kim , Doo Hyeb Youn , Byung Gyu Chae , Kwang Yong Kang , Yong Sik Lim , Gyungock Kim , Sunglyul Maeng , Seong Hyun Kim
- Applicant Address: KR
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR
- Agency: Blakely, Sokoloff, Taylor & Zafman
- Priority: KR10-2004-0055096 20040715
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.
Public/Granted literature
- US20060011942A1 2-Terminal semiconductor device using abrupt metal-insulator transition semiconductor material Public/Granted day:2006-01-19
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