Invention Grant
- Patent Title: Method for manufacturing semiconductor device, and semiconductor device and electronic device
- Patent Title (中): 半导体装置的制造方法以及半导体装置及电子装置
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Application No.: US12230277Application Date: 2008-08-27
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Publication No.: US07728332B2Publication Date: 2010-06-01
- Inventor: Shunpei Yamazaki
- Applicant: Shunpei Yamazaki
- Applicant Address: unknown Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee Address: unknown Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2004-277533 20040924
- Main IPC: H01L31/036
- IPC: H01L31/036

Abstract:
It is an object of the present invention to manufacture a semiconductor device easily and to provide a semiconductor device whose cost is reduced. According to the present invention, a thin film integrated circuit provided over a base insulating layer can be prevented from scattering by providing a region where a substrate and the base insulating layer are attached firmly after removing a peeling layer. Therefore, a semiconductor device including a thin film integrated circuit can be manufactured easily. In addition, since a semiconductor device is manufactured by using a substrate except a silicon substrate according to the invention, a large number of semiconductor devices can be manufactured at a time and a semiconductor device whose cost is reduced can be provided.
Public/Granted literature
- US20090008715A1 Method for manufacturing semiconductor device, and semiconductor device and electronic device Public/Granted day:2009-01-08
Information query
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