Invention Grant
- Patent Title: ZnO layer and semiconductor light emitting device
- Patent Title (中): ZnO层和半导体发光器件
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Application No.: US12428567Application Date: 2009-04-23
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Publication No.: US07728347B2Publication Date: 2010-06-01
- Inventor: Akio Ogawa , Michihiro Sano , Hiroyuki Kato , Hiroshi Kotani , Tomofumi Yamamuro
- Applicant: Akio Ogawa , Michihiro Sano , Hiroyuki Kato , Hiroshi Kotani , Tomofumi Yamamuro
- Applicant Address: JP Tokyo
- Assignee: Stanley Electric Co., Ltd.
- Current Assignee: Stanley Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Frishauf, Holtz, Goodman & Chick, P.C.
- Priority: JP2006-289469 20061025
- Main IPC: H01L29/24
- IPC: H01L29/24 ; H01L33/00 ; H01L21/20 ; H01L21/36 ; H01L21/04
Abstract:
A ZnO layer is provided which can obtain emission at a wavelength longer than blue (e.g., 420 nm) and has a novel structure. A transition energy narrower by 0.6 eV or larger than a band gap of ZnO can be obtained by doping S into a ZnO layer.
Public/Granted literature
- US20090236598A1 ZnO LAYER AND SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2009-09-24
Information query
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