Invention Grant
- Patent Title: Image sensor and method for manufacturing the same
- Patent Title (中): 图像传感器及其制造方法
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Application No.: US11967391Application Date: 2007-12-31
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Publication No.: US07728351B2Publication Date: 2010-06-01
- Inventor: Cheon Man Shim
- Applicant: Cheon Man Shim
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2007-0062019 20070625
- Main IPC: H01L31/072
- IPC: H01L31/072 ; H01L31/109 ; H01L31/0328 ; H01L31/0336

Abstract:
An image sensor provides enhanced integration of transistor circuitry and photo diodes. The image sensor simultaneously improves resolution and sensitivity. An image sensor an a method for manufacturing prevents defects in a photo diode by adopting a vertical photo diode structure. An image sensor includes a substrate which may include at least one circuit element. A bottom electrode and a first conductive layer may be sequentially formed over the substrate. A strained intrinsic layer may be formed over the first conductive layer. A second conductive layer may be formed over the strained intrinsic layer. An upper electrode may be formed over the second conductive layer.
Public/Granted literature
- US20080315252A1 IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2008-12-25
Information query
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