Invention Grant
US07728351B2 Image sensor and method for manufacturing the same 失效
图像传感器及其制造方法

Image sensor and method for manufacturing the same
Abstract:
An image sensor provides enhanced integration of transistor circuitry and photo diodes. The image sensor simultaneously improves resolution and sensitivity. An image sensor an a method for manufacturing prevents defects in a photo diode by adopting a vertical photo diode structure. An image sensor includes a substrate which may include at least one circuit element. A bottom electrode and a first conductive layer may be sequentially formed over the substrate. A strained intrinsic layer may be formed over the first conductive layer. A second conductive layer may be formed over the strained intrinsic layer. An upper electrode may be formed over the second conductive layer.
Public/Granted literature
Information query
Patent Agency Ranking
0/0