Invention Grant
- Patent Title: Damascene conductive line for contacting an underlying memory element
- Patent Title (中): 用于接触底层存储元件的镶嵌导电线
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Application No.: US12157086Application Date: 2008-06-06
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Publication No.: US07728352B2Publication Date: 2010-06-01
- Inventor: Charles H. Dennison
- Applicant: Charles H. Dennison
- Applicant Address: US MI Rochester Hills
- Assignee: Ovonyx, Inc.
- Current Assignee: Ovonyx, Inc.
- Current Assignee Address: US MI Rochester Hills
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: H01L27/14
- IPC: H01L27/14
Abstract:
A damascene approach may be utilized to form an electrode to a lower conductive line in a phase change memory. The phase change memory may be formed of a plurality of isolated memory cells, each including a phase change memory threshold switch and a phase change memory storage element.
Public/Granted literature
- US20080246161A1 Damascene conductive line for contacting an underlying memory element Public/Granted day:2008-10-09
Information query
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