Invention Grant
- Patent Title: Photodiode and method for fabricating same
- Patent Title (中): 光电二极管及其制造方法
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Application No.: US10599609Application Date: 2005-04-05
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Publication No.: US07728366B2Publication Date: 2010-06-01
- Inventor: Keishi Oohashi , Tsutomu Ishi , Toshio Baba , Junichi Fujikata , Kikuo Makita
- Applicant: Keishi Oohashi , Tsutomu Ishi , Toshio Baba , Junichi Fujikata , Kikuo Makita
- Applicant Address: JP
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP
- Agency: Hayes Soloway P.C.
- Priority: JP2004-111403 20040405
- International Application: PCT/JP2005/006660 WO 20050405
- International Announcement: WO2005/098966 WO 20051020
- Main IPC: H01L31/113
- IPC: H01L31/113
Abstract:
A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.
Public/Granted literature
- US20070194357A1 Photodiode and method for fabricating same Public/Granted day:2007-08-23
Information query
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