Invention Grant
- Patent Title: Embedded memory device and a manufacturing method thereof
- Patent Title (中): 嵌入式存储器件及其制造方法
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Application No.: US12142148Application Date: 2008-06-19
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Publication No.: US07728374B2Publication Date: 2010-06-01
- Inventor: Ming-Yen Huang , Wen-Hung Wu
- Applicant: Ming-Yen Huang , Wen-Hung Wu
- Applicant Address: TW Taipei
- Assignee: Ali Corporation
- Current Assignee: Ali Corporation
- Current Assignee Address: TW Taipei
- Agency: Rosenberg, Klein & Lee
- Priority: CN200810086334 20080324
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/8242

Abstract:
An embedded memory device solves the problem of the low reliability of the circuit due to the unstable power source. The embedded memory includes a metal-oxide semiconductor (MOS) capacitor and a metal-insulator-metal (MIM) capacitor to increase the stability of the power source ring to stabilize the voltage of the embedded memory and stabilize the voltage for the peripheral circuit of the embedded memory.
Public/Granted literature
- US20090236649A1 EMBEDDED MEMORY DEVICE AND A MANUFACTURING METHOD THEREOF Public/Granted day:2009-09-24
Information query
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