A magnetic random access memory (MRAM) cell comprises a MRAM device and a single crystal self-aligned diode. The MRAM device and the single crystal self-aligned diode are connected through a contact. Only one metal line is positioned above the MRAM device of the MRAM cell. A first and second spacers positioned adjacent to the opposite sidewalls of the contact define the size of the single crystal self-aligned diode. A first and second metal silicide lines are positioned adjacent to the first and second spacers, respectively. The single crystal self-aligned diode, defined in a silicon substrate, includes a bottom implant (BI) region and a contact implant (CI) region. The CI region is surrounded by the BI region except for a side of the CI region that aligns the surface of the silicon substrate. A fabrication method, a read method, two programming methods for the MRAM cell are also disclosed.