Invention Grant
US07728415B2 Power semiconductor component stack using lead technology with surface-mountable external contacts and a method for producing the same
有权
使用具有表面安装外部触头的引线技术的功率半导体元件堆叠及其制造方法
- Patent Title: Power semiconductor component stack using lead technology with surface-mountable external contacts and a method for producing the same
- Patent Title (中): 使用具有表面安装外部触头的引线技术的功率半导体元件堆叠及其制造方法
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Application No.: US11955710Application Date: 2007-12-13
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Publication No.: US07728415B2Publication Date: 2010-06-01
- Inventor: Khalil Hosseini , Alexander Koenigsberger , Ralf Otremba , Joachim Mahler , Xaver Schloegel , Klaus Schiess
- Applicant: Khalil Hosseini , Alexander Koenigsberger , Ralf Otremba , Joachim Mahler , Xaver Schloegel , Klaus Schiess
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Edell, Shapiro, Finnan, LLC
- Priority: DE102005027356 20050613
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L27/088
Abstract:
A power semiconductor component stack, using lead technology with surface-mountable external contacts, includes at least two MOSFET power semiconductor components each having a top side and an underside. The underside includes: a drain external contact area, a source external contact area and a gate external contact area. The top side includes at least one source external contact area and a gate external contact area. The gate external contact areas on the top side and the underside are electrically connected to one another. The power semiconductor component stack is a series circuit or a parallel circuit of MOSFET power semiconductor components arranged one above another in a plastic housing composition.
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