Invention Grant
US07728622B2 Software programmable logic using spin transfer torque magnetoresistive random access memory
有权
软件可编程逻辑采用自旋传输转矩磁阻随机存取存储器
- Patent Title: Software programmable logic using spin transfer torque magnetoresistive random access memory
- Patent Title (中): 软件可编程逻辑采用自旋传输转矩磁阻随机存取存储器
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Application No.: US12055794Application Date: 2008-03-26
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Publication No.: US07728622B2Publication Date: 2010-06-01
- Inventor: Lew Chua-Eoan , Matthew Nowak , Seung Kang
- Applicant: Lew Chua-Eoan , Matthew Nowak , Seung Kang
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Nicholas J. Pauley; Sam Talpalatsky; Peter Kamarchik
- Main IPC: G06F7/38
- IPC: G06F7/38 ; H03K19/177
Abstract:
Systems, circuits and methods for software programmable logic using Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) technology are disclosed. Magnetic tunnel junction (MTJ) storage elements can be formed into input planes and output planes. The input planes and output planes can be coupled together to form complex arrays that allow for the realization of logic functions.
Public/Granted literature
- US20080238475A1 Software Programmable Logic Using Spin Transfer Torque Magnetoresistive Random Access Memory Public/Granted day:2008-10-02
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