Invention Grant
- Patent Title: Delay circuit and semiconductor memory device including the same
- Patent Title (中): 延迟电路和包括其的半导体存储器件
-
Application No.: US12327520Application Date: 2008-12-03
-
Publication No.: US07728643B2Publication Date: 2010-06-01
- Inventor: Kwang-Myoung Rho
- Applicant: Kwang-Myoung Rho
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor, Inc.
- Current Assignee: Hynix Semiconductor, Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Law Firm PLC
- Priority: KR10-2008-0034011 20080414
- Main IPC: H03H11/26
- IPC: H03H11/26
Abstract:
A delay circuit that includes a logic gate through which an input signal passes, a capacitor configured to be charged and discharged at an output terminal of the logic gate and delaying the input signal, and a mirroring unit configured to constantly maintain current output by the logic gate by mirroring current output by a constant current source.
Public/Granted literature
- US20090256612A1 DELAY CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2009-10-15
Information query
