Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US12331039Application Date: 2008-12-09
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Publication No.: US07728652B2Publication Date: 2010-06-01
- Inventor: Yasuyuki Sohara , Masayasu Tanaka , Yasuhiro Okazaki
- Applicant: Yasuyuki Sohara , Masayasu Tanaka , Yasuhiro Okazaki
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, P.C.
- Priority: JP2006-038210 20060215
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
The present invention provides a charge pump circuit capable of achieving desired boosting operation even when a high-side switch for precharge or a low-side switch for driving output is constructed by a low-withstand-voltage transistor. The high level of a drive input signal for driving a high-side switch for precharge and a low-side switch for driving output in response to a clock signal is set to the level of a boosted output voltage. The low level of the drive input signal is set to the level of an input voltage, not ground potential.
Public/Granted literature
- US20090096508A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2009-04-16
Information query
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