Invention Grant
- Patent Title: Integrated implementation of a voltage boost follower and method therefor
- Patent Title (中): 电压升压跟随器的集成实现及其方法
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Application No.: US11472473Application Date: 2006-06-22
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Publication No.: US07728663B2Publication Date: 2010-06-01
- Inventor: Gordon G. Rabjohn , Johan Grundlingh , Edward J. Whittaker
- Applicant: Gordon G. Rabjohn , Johan Grundlingh , Edward J. Whittaker
- Applicant Address: CA Ottawa, Ontario
- Assignee: SiGe Semiconductor Inc.
- Current Assignee: SiGe Semiconductor Inc.
- Current Assignee Address: CA Ottawa, Ontario
- Agency: Townsend and Townsend and Crew LLP
- Main IPC: H03F3/68
- IPC: H03F3/68
Abstract:
A collector boost circuit is disclosed for providing a first voltage in a first mode of operation to a power amplifier, and another voltage in a second mode of operation to the power amplifier. The collector boost circuit uses an indicator signal derived by an RF detector to switch between the first and the second mode of operation. The another voltage is a boosted voltage greater than the first voltage and is provided when required during peak excursions to prevent amplifier clipping through a boost capacitor. The another voltage is continuous and varies in accordance with the detected peak signal amplitude.
Public/Granted literature
- US20070296504A1 Integrated implementation of a voltage boost follower and method therefor Public/Granted day:2007-12-27
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