Invention Grant
- Patent Title: Variable-gain amplification circuit, receiver and receiver IC
- Patent Title (中): 可变增益放大电路,接收器和接收器IC
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Application No.: US12024193Application Date: 2008-02-01
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Publication No.: US07728668B2Publication Date: 2010-06-01
- Inventor: Taiwa Okanobu
- Applicant: Taiwa Okanobu
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sonnenschein Nath & Rosenthal LLP
- Priority: JP2007-025309 20070205
- Main IPC: H03F3/45
- IPC: H03F3/45

Abstract:
Disclosed herein is a variable-gain amplification circuit, wherein the sources of first and second MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are tied to a common connection point connected to a current source. An input signal is supplied to the gates of the first and second MOSFETs. The drains of the first and second MOSFETs are connected to the sources of third and fourth MOSFETs respectively whereas the drains of the third and fourth MOSFETs are connected to two output terminals respectively, a gain control voltage is supplied to the gates of both the third and fourth MOSFETs. When control is executed in order to lower the gain control voltage supplied to the gates of both the third and fourth MOSFETs, other control is also executed in order to raise a bias voltage applied to the gates of both the first and second MOSFETs.
Public/Granted literature
- US20080186100A1 VARIABLE-GAIN AMPLIFICATION CIRCUIT, RECEIVER AND RECEIVER IC Public/Granted day:2008-08-07
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