Invention Grant
- Patent Title: Condition assessment method for a structure including a semiconductor material
- Patent Title (中): 包括半导体材料的结构的条件评估方法
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Application No.: US11957395Application Date: 2007-12-14
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Publication No.: US07728958B2Publication Date: 2010-06-01
- Inventor: Paul L. Pfaff
- Applicant: Paul L. Pfaff
- Applicant Address: US OR Lake Oswego
- Assignee: Attofemto, Inc.
- Current Assignee: Attofemto, Inc.
- Current Assignee Address: US OR Lake Oswego
- Agency: Davis Wright Tremaine LLP
- Agent George C. Rondeau, Jr.
- Main IPC: G01L1/24
- IPC: G01L1/24 ; G01B9/021 ; G01B9/02

Abstract:
An improved condition testing system and method includes a structure including a semiconductor material with a target portion and a second portion. The target portion has a first feature when at least one of the following occurs: an external force is received by the second portion of the structure and an internal condition occurs in the target portion. The system and method further has a grating shaped and located to produce a first optical interference pattern when the target portion and the grating are exposed to non-invasive illumination and when the target portion has the first feature. Further implementations use a second grating spaced apart from the first grating.
Public/Granted literature
- US20080186580A1 CONDITION ASSESSMENT METHOD FOR A STRUCTURE INCLUDING A SEMICONDUCTOR MATERIAL Public/Granted day:2008-08-07
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