Invention Grant
- Patent Title: Excimer laser inspection system
- Patent Title (中): 准分子激光检查系统
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Application No.: US11594625Application Date: 2006-11-08
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Publication No.: US07728968B2Publication Date: 2010-06-01
- Inventor: Bin-Ming Benjamin Tsai , Yung-Ho Chuang , J. Joseph Armstrong , David Lee Brown
- Applicant: Bin-Ming Benjamin Tsai , Yung-Ho Chuang , J. Joseph Armstrong , David Lee Brown
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Technologies Corporation
- Current Assignee: KLA-Tencor Technologies Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Smyrski Law Group, A P.C.
- Main IPC: G01N21/00
- IPC: G01N21/00

Abstract:
A system and method for inspecting a specimen, such as a semiconductor wafer, including illuminating at least a portion of the specimen using an excimer source using at least one relatively intense wavelength from the source, detecting radiation received from the illuminated portion of the specimen, analyzing the detected radiation for potential defects present in the specimen portion.
Public/Granted literature
- US20070121107A1 Excimer laser inspection system Public/Granted day:2007-05-31
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