Invention Grant
US07729173B2 Method for testing internal high voltage in nonvolatile semiconductor memory device and related voltage output circuit
失效
用于在非易失性半导体存储器件和相关电压输出电路中测试内部高电压的方法
- Patent Title: Method for testing internal high voltage in nonvolatile semiconductor memory device and related voltage output circuit
- Patent Title (中): 用于在非易失性半导体存储器件和相关电压输出电路中测试内部高电压的方法
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Application No.: US11957808Application Date: 2007-12-17
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Publication No.: US07729173B2Publication Date: 2010-06-01
- Inventor: Chae-Hoon Kim , Dae-Han Kim
- Applicant: Chae-Hoon Kim , Dae-Han Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2007-0005035 20070117
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C5/14 ; G11C8/00
Abstract:
In a voltage output circuit of a nonvolatile semiconductor memory device, a high voltage generator generates an internal high voltage, a sampling signal generator generates a sampling signal, and a sample and old circuit samples and holds the internal high voltage in accordance with the sampling signal.
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