A data sensing method for a dynamic random access memory including a storage capacitor configured to store data, a bit line, a transistor connecting the storage capacitor and the bit line, a reference bit line, and a sense amplifier connecting the bit line and the reference bit line. The data sensing method comprises the steps of turning off the transistor when the stored data is a predetermined value before enabling the sense amplifier to sense the voltage of the bit line and the reference bit line, and turning on the transistor when the stored data is opposite to the predetermined value such that a charge sharing process occurs between the storage capacitor and a parasitic capacitor of the bit line before enabling the sense amplifier to sense the voltage of the bit line and the reference bit line.