Invention Grant
- Patent Title: Dynamic bias control in power amplifier
- Patent Title (中): 功率放大器中的动态偏置控制
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Application No.: US11683913Application Date: 2007-03-08
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Publication No.: US07729672B2Publication Date: 2010-06-01
- Inventor: Junxiong Deng , Prasad Gudem
- Applicant: Junxiong Deng , Prasad Gudem
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM, Incorporated
- Current Assignee: QUALCOMM, Incorporated
- Current Assignee Address: US CA San Diego
- Agent Howard H. Seo; William M. Hooks
- Main IPC: H04B1/04
- IPC: H04B1/04 ; H04M1/00

Abstract:
An RF output power amplifier (PA) of a cellular telephone includes first and second Class AB amplifier circuits. If the cellular telephone is to operate in a high power operating mode, then the first amplifier drives the PA output terminal. The power transistor(s) in the first amplifier is/are biased at a first DC current and a first DC voltage so as to optimize efficiency and linearity at high output powers. If the cellular telephone is to operate in a low power operating mode, then the second amplifier drives the output terminal. The power transistor(s) in the second amplifier is/are biased at a second DC current and a second DC voltage so as to optimize efficiency and linearity at low output powers. By sizing the power transistors in the amplifiers appropriately, emitter current densities are maintained substantially equal so that PA power gain is the same in the two operating modes.
Public/Granted literature
- US20070222519A1 Dynamic Bias Control in Power Amplifier Public/Granted day:2007-09-27
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