Invention Grant
- Patent Title: Insulating target material, method of manufacturing insulating target material, insulating complex oxide film, and device
- Patent Title (中): 绝缘靶材料，绝缘材料的制造方法，绝缘复合氧化物膜及器件
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Application No.: US11511663Application Date: 2006-08-29
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Publication No.: US07731933B2Publication Date: 2010-06-08
- Inventor: Takeshi Kijima , Takamitsu Higuchi
- Applicant: Takeshi Kijima , Takamitsu Higuchi
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2005-249632 20050830
- Main IPC: C01G25/02
- IPC: C01G25/02 ; C23C14/00
Abstract:
An insulating target material for obtaining an insulating complex oxide film represented by a general formula AB1-XCXO3, an element A including at least Pb, an element B including at least one of Zr, Ti, V, W, and Hf, and an element C including at least one of Nb and Ta.
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