Invention Grant
- Patent Title: Epitaxial layer structures and precursors for topotactic anion exchange oxide films
- Patent Title (中): 外延层结构和前导阴离子交换氧化膜的前体
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Application No.: US11962890Application Date: 2007-12-21
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Publication No.: US07732067B2Publication Date: 2010-06-08
- Inventor: Mark A. Zurbuchen
- Applicant: Mark A. Zurbuchen
- Agency: Ryndak & Suri LLP
- Main IPC: B32B9/00
- IPC: B32B9/00

Abstract:
This invention disclosure describes methods for the fabrication of metal oxide films on surfaces by topotactic anion exchange, and laminate structures enabled by the method. A precursor metal-nonmetal film is deposited on the surface, and is subsequently oxidized via topotactic anion exchange to yield a topotactic metal-oxide product film. The structures include a metal-oxide layer(s) and/or a metal-nonmetal layer(s).
Public/Granted literature
- US20080241581A1 Epitaxial Layer Structures and Precursors for Topotactic Anion Exchange Oxide Films Public/Granted day:2008-10-02
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