Invention Grant
- Patent Title: Immersion photolithography with megasonic rinse
- Patent Title (中): 浸没式光刻用超声波冲洗
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Application No.: US10995653Application Date: 2004-11-23
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Publication No.: US07732123B2Publication Date: 2010-06-08
- Inventor: Ching-Yu Chang
- Applicant: Ching-Yu Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/26
- IPC: G03F7/26
Abstract:
A method comprises forming a photoresist on a substrate, rinsing the photoresist using a rinse liquid agitated with at least one megasonic source, exposing the photoresist to radiation while immersed in a liquid, and developing the photoresist.
Public/Granted literature
- US20060110689A1 Immersion photolithography with megasonic rinse Public/Granted day:2006-05-25
Information query
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