Invention Grant
- Patent Title: Method of manufacturing flash memory device
- Patent Title (中): 制造闪存设备的方法
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Application No.: US12273806Application Date: 2008-11-19
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Publication No.: US07732226B2Publication Date: 2010-06-08
- Inventor: Yong Wook Shin
- Applicant: Yong Wook Shin
- Applicant Address: KR Seoul
- Assignee: Dongbu Hitek Co., Ltd.
- Current Assignee: Dongbu Hitek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Saliwanchik, Lloyd & Saliwanchik
- Priority: KR10-2007-0122673 20071129
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Disclosed are methods of manufacturing a flash memory device. The method can include performing a first test on memory banks of chips on a wafer to record an availability of the banks; performing an inking process on each of the chips according to a number of available banks in the chip; performing a sawing process to divide the chips mounted on the wafer; packaging the divided chips according to the number of available banks in the chip; and performing a verification test on the packaged chips.
Public/Granted literature
- US20090142861A1 Method of Manufacturing Flash Memory Device Public/Granted day:2009-06-04
Information query
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