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Invention Grant
US07732273B2 Semiconductor device manufacturing method and semiconductor device 失效
半导体器件制造方法和半导体器件

Semiconductor device manufacturing method and semiconductor device
Abstract:
A manufacturing method of a semiconductor device having a highly reliable capacitor, and the semiconductor device are provided. The semiconductor device manufacturing method according to the present invention includes: a first step of forming a first electrode of a capacitor on a semiconductor substrate; a second step of forming a capacitor insulating film on the whole surface including a side surface and an upper surface of the first electrode; a third step of forming a protection insulating film made of a material different from that of the capacitor insulating film, on the capacitor insulating film; a fourth step of removing the protection insulating film and the capacitor insulating film from the upper surface of the first electrode, by anisotropically etching the protection insulating film and the capacitor insulating film; a fifth step of removing the protection insulating film that remains on the side surface of the first electrode; and a sixth step of forming a second electrode of the capacitor on the capacitor insulating film, after removing the protection insulating film.
Abstract(Chinese):

提供具有高可靠性电容器的半导体器件的制造方法和半导体器件。 根据本发明的半导体器件制造方法包括：在半导体衬底上形成电容器的第一电极的第一步骤; 在包括第一电极的侧表面和上表面的整个表面上形成电容器绝缘膜的第二步骤; 在电容器绝缘膜上形成由不同于电容器绝缘膜的材料制成的保护绝缘膜的第三步骤; 通过各向异性蚀刻保护绝缘膜和电容器绝缘膜，从第一电极的上表面去除保护绝缘膜和电容器绝缘膜的第四步骤; 去除保留在第一电极的侧表面上的保护绝缘膜的第五步骤; 以及在除去保护绝缘膜之后，在电容器绝缘膜上形成电容器的第二电极的第六步骤。

Public/Granted literature
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Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78 ...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82 ....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822 .....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232 ......场效应工艺
H01L21/8234 .......MIS工艺
H01L21/8239 ........存储器结构
H01L21/8242 .........动态随机存取存储结构（DRAM）
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