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US07732275B2 Methods of forming NAND flash memory with fixed charge 有权
用固定电荷形成NAND闪存的方法

Methods of forming NAND flash memory with fixed charge
Abstract:
A string of nonvolatile memory cells connected in series includes fixed charges located between floating gates and the underlying substrate surface. Such a fixed charge affects distribution of charge carriers in an underlying portion of the substrate and thus affects threshold voltage of a device. A fixed charge layer may extend over source/drain regions also.
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