Invention Grant
US07732282B2 Transistor of the I-MOS type comprising two independent gates and method of using such a transistor
有权
包括两个独立栅极的I-MOS型晶体管和使用这种晶体管的方法
- Patent Title: Transistor of the I-MOS type comprising two independent gates and method of using such a transistor
- Patent Title (中): 包括两个独立栅极的I-MOS型晶体管和使用这种晶体管的方法
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Application No.: US12085866Application Date: 2006-12-01
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Publication No.: US07732282B2Publication Date: 2010-06-08
- Inventor: Cyrille Le Royer , Olivier Faynot , Laurent Clavelier
- Applicant: Cyrille Le Royer , Olivier Faynot , Laurent Clavelier
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Oliff & Berridge, PLC
- Priority: FR0512358 20051206
- International Application: PCT/FR2006/002628 WO 20061201
- International Announcement: WO2007/065985 WO 20070614
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The transistor comprises a source and a drain separated by a lightly doped intermediate zone. The intermediate zone forms first and second junctions respectively with the source and with the drain. The transistor comprises a first gate to generate an electric field in the intermediate zone, on the same side as the first junction, and a second gate to generate an electric field in the intermediate zone, on the same side as the second junction.
Public/Granted literature
- US20090096028A1 Transistor of the I-MOS Type Comprising Two Independent Gates and Method of Using Such a Transistor Public/Granted day:2009-04-16
Information query
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