Invention Grant
US07732326B2 Semiconductor device having a second level of metallization formed over a first level with minimal damage to the first level and method
失效
半导体器件具有在第一级上形成的第二级金属化，对第一级具有最小的损伤和方法
- Patent Title: Semiconductor device having a second level of metallization formed over a first level with minimal damage to the first level and method
- Patent Title (中): 半导体器件具有在第一级上形成的第二级金属化，对第一级具有最小的损伤和方法
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Application No.: US11497595Application Date: 2006-08-02
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Publication No.: US07732326B2Publication Date: 2010-06-08
- Inventor: Tien-I Bao , Syun-Ming Jang
- Applicant: Tien-I Bao , Syun-Ming Jang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/4763
- IPC: H01L21/4763
Abstract:
A method for processing a semiconductor structure includes the steps of capping a top surface of the semiconductor structure that defines the metallization layer with a thin stop layer, forming a dielectric layer over the thin stop layer, wherein the dielectric layer defines at least one area where the thin stop layer is exposed, and removing the exposed thin stop layer to expose a top surface of the metallization layer using etchant gases substantially free from oxygen, so that the metallization layer is substantially free of damage.
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