Invention Grant
US07732340B2 Method for adjusting a critical dimension in a high aspect ratio feature
失效
用于调整高宽高比特征中临界尺寸的方法
- Patent Title: Method for adjusting a critical dimension in a high aspect ratio feature
- Patent Title (中): 用于调整高宽高比特征中临界尺寸的方法
-
Application No.: US11463133Application Date: 2006-08-08
-
Publication No.: US07732340B2Publication Date: 2010-06-08
- Inventor: Toshifumi Nagaiwa , Junichi Sasaki , Stefan Sawusch
- Applicant: Toshifumi Nagaiwa , Junichi Sasaki , Stefan Sawusch
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01I21/302
- IPC: H01I21/302

Abstract:
A method for adjusting the lateral critical dimension (i.e., length and width) of a feature formed in a layer on a substrate using a dry etching process. One or more thin intermediate sub-layers are inserted in the layer within which the feature is to be formed. Once an intermediate sub-layer is reached during the etching process, an etch process is performed to correct and/or adjust the lateral critical dimensions before etching through the intermediate sub-layer and continuing the layer etch.
Public/Granted literature
- US20080038673A1 METHOD FOR ADJUSTING A CRITICAL DIMENSION IN A HIGH ASPECT RATIO FEATURE Public/Granted day:2008-02-14
Information query