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US07732340B2 Method for adjusting a critical dimension in a high aspect ratio feature 失效
用于调整高宽高比特征中临界尺寸的方法

Method for adjusting a critical dimension in a high aspect ratio feature
Abstract:
A method for adjusting the lateral critical dimension (i.e., length and width) of a feature formed in a layer on a substrate using a dry etching process. One or more thin intermediate sub-layers are inserted in the layer within which the feature is to be formed. Once an intermediate sub-layer is reached during the etching process, an etch process is performed to correct and/or adjust the lateral critical dimensions before etching through the intermediate sub-layer and continuing the layer etch.
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