Invention Grant
US07732346B2 Wet cleaning process and method for fabricating semiconductor device using the same
有权
湿式清洗方法及使用其制造半导体器件的方法
- Patent Title: Wet cleaning process and method for fabricating semiconductor device using the same
- Patent Title (中): 湿式清洗方法及使用其制造半导体器件的方法
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Application No.: US11679677Application Date: 2007-02-27
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Publication No.: US07732346B2Publication Date: 2010-06-08
- Inventor: Chien-En Hsu , Chih-Nan Liang , Po-Sheng Lee
- Applicant: Chien-En Hsu , Chih-Nan Liang , Po-Sheng Lee
- Applicant Address: TW Hsinchu
- Assignee: United Mircoelectronics Corp.
- Current Assignee: United Mircoelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A wet cleaning process is provided. The wet cleaning process includes at least one first rinse process and a second rinse step. The first rinse step includes rinsing a substrate using deionized water containing CO2, and then draining the water containing CO2 to expose the substrate in an atmosphere of CO2. The second rinse step includes rinsing the substrate using deionized water containing CO2.
Public/Granted literature
- US20080203057A1 WET CLEANING PROCESS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2008-08-28
Information query
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