Invention Grant
- Patent Title: Pattern inspection method, pattern inspection apparatus, semiconductor device manufacturing method, and program
- Patent Title (中): 图案检查方法，图案检查装置，半导体装置制造方法和程序
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Application No.: US11703669Application Date: 2007-02-08
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Publication No.: US07732763B2Publication Date: 2010-06-08
- Inventor: Hiroshi Motoki
- Applicant: Hiroshi Motoki
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2006-032433 20060209
- Main IPC: H01J37/26
- IPC: H01J37/26
Abstract:
A pattern inspection method includes: irradiating a first region of a surface of a sample having a pattern to be inspected with a charged particle beam; acquiring a first two-dimensional image showing a state of the surface of the sample; searching for a pattern similar to a previously prepared reference image within the first two-dimensional image; when the pattern similar to the reference image is not detected in the first two-dimensional image, irradiating a second region of the surface of the sample that has not been irradiated with a charged particle beam; acquiring a second two-dimensional image showing a state of the surface of the sample; and searching a pattern similar to the reference image within the second two-dimensional image.
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