Invention Grant
- Patent Title: Light-emitting device and method for manufacturing the same
- Patent Title (中): 发光装置及其制造方法
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Application No.: US10571891Application Date: 2004-09-24
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Publication No.: US07732808B2Publication Date: 2010-06-08
- Inventor: Hisao Ikeda , Junichiro Sakata
- Applicant: Hisao Ikeda , Junichiro Sakata
- Applicant Address: unknown Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee Address: unknown Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2003-336295 20030926
- International Application: PCT/JP2004/014412 WO 20040924
- International Announcement: WO2005/031798 WO 20050407
- Main IPC: H01L35/24
- IPC: H01L35/24 ; H01L51/00

Abstract:
A light-emitting element is disclosed that can drive at a low driving voltage and that has a longer lifetime than the conventional light-emitting element, and a method is disclosed for manufacturing the light-emitting element. The disclosed light-emitting element includes a plurality of layers between a pair of electrodes; and at least one layer among the plurality of layers contains one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. Such the light-emitting element can suppress the crystallization of a layer containing one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. As a result, a lifetime of the light-emitting element can be extended.
Public/Granted literature
- US20070200125A1 Light-Emitting Device And Method For Manufacturing The Same Public/Granted day:2007-08-30
Information query
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