Invention Grant
- Patent Title: Image sensor and method for manufacturing the same
- Patent Title (中): 图像传感器及其制造方法
-
Application No.: US11842608Application Date: 2007-08-21
-
Publication No.: US07732813B2Publication Date: 2010-06-08
- Inventor: Jin Ha Park
- Applicant: Jin Ha Park
- Applicant Address: KR Seoul
- Assignee: Dongbu Hitek Co., Ltd.
- Current Assignee: Dongbu Hitek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Saliwanchik Lloyd & Saliwanchik
- Priority: KR10-2007-0024915 20070314
- Main IPC: H01L31/0376
- IPC: H01L31/0376

Abstract:
An image sensor and a method of manufacturing the same are provided. A metal wiring layer is formed on a semiconductor substrate including a circuit region, and first conductive layers are formed on the metal layer separated by a pixel isolation layer. An intrinsic layer is formed on the first conductive layers, and a second conductive layer is formed on the intrinsic layer.
Public/Granted literature
- US20080224137A1 Image Sensor and Method for Manufacturing the Same Public/Granted day:2008-09-18
Information query
IPC分类: