Invention Grant
- Patent Title: Nitride semiconductor device
- Patent Title (中): 氮化物半导体器件
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Application No.: US11766484Application Date: 2007-06-21
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Publication No.: US07732837B2Publication Date: 2010-06-08
- Inventor: Wataru Saito , Ichiro Omura
- Applicant: Wataru Saito , Ichiro Omura
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-255467 20040902
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
In a nitride semiconductor device according to one embodiment of the invention, a p-type gallium nitride (GaN) layer electrically connected to a source electrode and extending and projecting to a drain electrode side with respect to a gate electrode is formed on an undoped or n-type aluminum gallium nitride (AlGaN) layer serving as a barrier layer.
Public/Granted literature
- US20070241337A1 NITRIDE SEMICONDUCTOR DEVICE Public/Granted day:2007-10-18
Information query
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