Invention Grant
- Patent Title: Epitaxial imprinting
- Patent Title (中): 外延印记
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Application No.: US11684306Application Date: 2007-03-09
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Publication No.: US07732865B2Publication Date: 2010-06-08
- Inventor: Toshiharu Furukawa , Carl Radens , William R. Tonti , Richard Q. Williams
- Applicant: Toshiharu Furukawa , Carl Radens , William R. Tonti , Richard Q. Williams
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Joseph P. Abate, Esq.
- Main IPC: H01L29/72
- IPC: H01L29/72
Abstract:
The present invention provides an epitaxial imprinting process for fabricating a hybrid substrate that includes a bottom semiconductor layer; a continuous buried insulating layer present atop said bottom semiconductor layer; and a top semiconductor layer present on said continuous buried insulating layer, wherein said top semiconductor layer includes separate planar semiconductor regions that have different crystal orientations, said separate planar semiconductor regions are isolated from each other. The epitaxial printing process of the present invention utilizing epitaxial growth, wafer bonding and a recrystallization anneal.
Public/Granted literature
- US20070145373A1 EPITAXIAL IMPRINTING Public/Granted day:2007-06-28
Information query
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