Invention Grant
US07732874B2 FinFET structure using differing gate dielectric materials and gate electrode materials
有权
FinFET结构使用不同的栅介质材料和栅电极材料
- Patent Title: FinFET structure using differing gate dielectric materials and gate electrode materials
- Patent Title (中): FinFET结构使用不同的栅介质材料和栅电极材料
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Application No.: US11847573Application Date: 2007-08-30
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Publication No.: US07732874B2Publication Date: 2010-06-08
- Inventor: Huilong Zhu , Bruce B. Doris , Ying Zhang
- Applicant: Huilong Zhu , Bruce B. Doris , Ying Zhang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent H. Daniel Schnurmann
- Main IPC: H01L29/423
- IPC: H01L29/423
Abstract:
A semiconductor structure includes a first finFET and a second finFET. The first finFET and the second finFET may comprise an n-finFET and a p-finFET to provide a CMOS finFET structure. Within the semiconductor structure, at least one of: (1) a first gate dielectric within the first finFET and a second gate dielectric within the second finFET comprise different gate dielectric materials; and/or (2) a first gate electrode within the first finFET and a second gate electrode within the second finFET comprise different gate electrode materials.
Public/Granted literature
- US20090057765A1 FINFET STRUCTURE USING DIFFERING GATE DIELECTRIC MATERIALS AND GATE ELECTRODE MATERIALS Public/Granted day:2009-03-05
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