Invention Grant
- Patent Title: Methods of die sawing and structures formed thereby
- Patent Title (中): 模具切割的方法和由此形成的结构
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Application No.: US11424367Application Date: 2006-06-15
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Publication No.: US07732897B2Publication Date: 2010-06-08
- Inventor: Shin-Puu Jeng , Hao-Yi Tsai
- Applicant: Shin-Puu Jeng , Hao-Yi Tsai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L23/544
- IPC: H01L23/544

Abstract:
A structure includes a substrate having a plurality of scribe line areas surrounding a plurality of die areas. Each of the die areas includes at least one first conductive structure formed over the substrate. Each of the scribe line areas includes at least one active region and at least one non-active region. The active region includes a second conductive structure formed therein. The structure further includes at least one first passivation layer formed over the first conductive structure and second conductive structure, wherein at least a portion of the first passivation layer within the non-active region is removed, whereby die-sawing damage is reduced.
Public/Granted literature
- US20070293019A1 METHODS OF DIE SAWING AND STRUCTURES FORMED THEREBY Public/Granted day:2007-12-20
Information query
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