Invention Grant
- Patent Title: Semiconductor device and semiconductor memory device
- Patent Title (中): 半导体器件和半导体存储器件
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Application No.: US12238983Application Date: 2008-09-26
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Publication No.: US07732908B2Publication Date: 2010-06-08
- Inventor: Taku Nishiyama , Tetsuya Yamamoto , Kiyokazu Okada
- Applicant: Taku Nishiyama , Tetsuya Yamamoto , Kiyokazu Okada
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPP2007-255633 20070928
- Main IPC: H01L23/02
- IPC: H01L23/02
Abstract:
A plurality of semiconductor elements configuring a first element group are stacked in a step-like shape on a wiring board. A plurality of semiconductor elements configuring a second element group are stacked in a step-like shape on the first element group toward a direction opposite to the stepped direction of the first element group. The semiconductor elements are electrically connected to connection pads of the wiring board through metallic wires. Among the plurality of semiconductor elements configuring the second element group, the lowermost semiconductor element has a thickness larger than those of the other semiconductor elements.
Public/Granted literature
- US20090085223A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2009-04-02
Information query
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