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US07732922B2 Simultaneous grain modulation for BEOL applications 失效
BEOL应用的同时粒度调制

Simultaneous grain modulation for BEOL applications
Abstract:
The invention is directed to an improved semiconductor structure, such that within the same insulating layer, Cu interconnects embedded within the same insulating level layer have a different Cu grain size than other Cu interconnects embedded within the same insulating level layer.
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