Invention Grant
US07732930B2 Semiconductor device, relay chip, and method for producing relay chip
失效
半导体装置,继电器芯片及其制造方法
- Patent Title: Semiconductor device, relay chip, and method for producing relay chip
- Patent Title (中): 半导体装置,继电器芯片及其制造方法
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Application No.: US11851118Application Date: 2007-09-06
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Publication No.: US07732930B2Publication Date: 2010-06-08
- Inventor: Eiichi Makino , Shigeo Ohshima , Naohisa Okumura
- Applicant: Eiichi Makino , Shigeo Ohshima , Naohisa Okumura
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-241656 20060906; JP2006-282693 20061017
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
A semiconductor device including a circuit substrate including n number of terminals; a semiconductor chip provided on the circuit substrate and including n number of terminals; and a relay chip including a triangular substrate having a first side, a second side and a third side which form triangle, n number of first terminals located along the first side, n number of second terminals located along the second side, and a plurality of wires connecting the first terminals and the second terminals respectively; a first wire connecting each of the n number of terminals of the circuit substrate to a corresponding first terminal among the n number of first terminals; and a second wire connecting each of the n number of terminals of the semiconductor chip to a corresponding second terminal among the n number of second terminals.
Public/Granted literature
- US20080054491A1 SEMICONDUCTOR DEVICE, RELAY CHIP, AND METHOD FOR PRODUCING RELAY CHIP Public/Granted day:2008-03-06
Information query
IPC分类: