A method of testing a fuse element for a memory device is provided. A first test probe is electrically connected to a program terminal of the memory device. A second test probe is electrically connected to a ground terminal. The fuse element is on an electrical circuit path between the program terminal and the ground terminal. The first and second test probes are electrically connected to a testing device. A first voltage is applied with the testing device between the program terminal and the ground terminal. At least part of a first current of the first voltage flows across the fuse element. The first voltage and the at least part of the first current that flows across the fuse element is not large enough to change the conductivity state of the fuse element. The first current is measured and used to evaluated the conductive state of the fuse element.